The SIGC128T170R3E is a 1700 V IGBT bare die designed for use in power modules and industrial drives, featuring trench and field stop technology for low turn-off losses and easy paralleling. It has a die size of 11.33 mm × 11.33 mm, a thickness of 190 µm, and is mounted on foil. The device supports a continuous collector current of 100 A at 100°C and a pulsed collector current of 300 A. The junction temperature range is -40 °C to +175 °C, with an operating junction temperature up to +150 °C. The gate-emitter voltage is rated at ±20 V, and the saturation voltage at 100 A and 25 °C is 1.6 V to 2.4 V. The part is electrostatic discharge sensitive per MIL-STD-883 and is not qualified to AEC-Q100 or AEC-Q101 standards.
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.
Summary of Features
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SIGC128T170R3E |
| Product Name | Power - IGBT - IGBT Bare Dies - SIGC128T170R3E |
| VCE(on) | 1700 volts |
