Manufacturer: Infineon Technologies
Win Source Part Number: 1095632-SGW25N120
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 225nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 46A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 84A
Collector-emitter saturation voltage(Max): 3.6V @ 15V, 25A
Total Switching Energy(Ets): 3.7mJ
Turn-on and Turn-off delay time: 45ns/730ns
Testing Conditions: 800V, 25A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
IGBTs FAST IGBT NPT TECH 1200V 25A Product overview: SGW25N120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGW25N120 can be used for catalog matching and distributor lookup.
IGBT Transistors FAST IGBT NPT TECH 1200V 25A
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1095632-SGW25N120 | 279-SGW25N120 | SGW25N120 |
| Product Name | IGBTs - Single - SGW25N120 | 1200V 25A IGBT Transistor | IGBT Transistors |
| VCE(on) | 3.6 volts |