Infineon Technologies AG IGBTs - Single - SGW25N120 SGW25N120

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1095632-SGW25N120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 46A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 84A Collector-emitter saturation voltage(Max): 3.6V @ 15V, 25A Total Switching Energy(Ets): 3.7mJ Turn-on and Turn-off delay time: 45ns/730ns Testing Conditions: 800V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1095632-SGW25N120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 46A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 84A Collector-emitter saturation voltage(Max): 3.6V @ 15V, 25A Total Switching Energy(Ets): 3.7mJ Turn-on and Turn-off delay time: 45ns/730ns Testing Conditions: 800V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - SGW25N120 - 1095632-SGW25N120 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGW25N120
1095632-SGW25N120
IGBTs - Single - SGW25N120 1095632-SGW25N120
Manufacturer: Infineon Technologies Win Source Part Number: 1095632-SGW25N120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 46A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 84A Collector-emitter saturation voltage(Max): 3.6V @ 15V, 25A Total Switching Energy(Ets): 3.7mJ Turn-on and Turn-off delay time: 45ns/730ns Testing Conditions: 800V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1095632-SGW25N120
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 225nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 46A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 84A
Collector-emitter saturation voltage(Max): 3.6V @ 15V, 25A
Total Switching Energy(Ets): 3.7mJ
Turn-on and Turn-off delay time: 45ns/730ns
Testing Conditions: 800V, 25A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
1200V 25A IGBT Transistor
279-SGW25N120
1200V 25A IGBT Transistor 279-SGW25N120
IGBTs FAST IGBT NPT TECH 1200V 25A Product overview: SGW25N120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGW25N120 can be used for catalog matching and distributor lookup.

IGBTs FAST IGBT NPT TECH 1200V 25A Product overview: SGW25N120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGW25N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
SGW25N120
IGBT Transistors SGW25N120
IGBT Transistors FAST IGBT NPT TECH 1200V 25A

IGBT Transistors FAST IGBT NPT TECH 1200V 25A

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1095632-SGW25N120 279-SGW25N120 SGW25N120
Product Name IGBTs - Single - SGW25N120 1200V 25A IGBT Transistor IGBT Transistors
VCE(on) 3.6 volts
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