Infineon Technologies AG IGBTs - Single - IRGP30B60KD-E IRGP30B60KD-E

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069672-IRGP30B60KD-E Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 125ns IGBT Type: NPT Input Type: Standard Gate Charge: 102nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 304W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A Total Switching Energy(Ets): 350μJ (on), 825μJ (off) Turn-on and Turn-off delay time: 46ns/185ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069672-IRGP30B60KD-E Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 125ns IGBT Type: NPT Input Type: Standard Gate Charge: 102nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 304W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A Total Switching Energy(Ets): 350μJ (on), 825μJ (off) Turn-on and Turn-off delay time: 46ns/185ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Suppliers

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IGBTs - Single - IRGP30B60KD-E - 069672-IRGP30B60KD-E - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGP30B60KD-E
069672-IRGP30B60KD-E
IGBTs - Single - IRGP30B60KD-E 069672-IRGP30B60KD-E
Manufacturer: Infineon Technologies Win Source Part Number: 069672-IRGP30B60KD-E Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 125ns IGBT Type: NPT Input Type: Standard Gate Charge: 102nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 304W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A Total Switching Energy(Ets): 350μJ (on), 825μJ (off) Turn-on and Turn-off delay time: 46ns/185ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069672-IRGP30B60KD-E
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 125ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 102nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 304W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A
Total Switching Energy(Ets): 350μJ (on), 825μJ (off)
Turn-on and Turn-off delay time: 46ns/185ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 069672-IRGP30B60KD-E
Product Name IGBTs - Single - IRGP30B60KD-E
VCE(on) 2.35 volts
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