Infineon Technologies AG IGBT Bare Dies SIGC06T65GE

Description
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
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Description
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Bare Dies - SIGC06T65GE - Infineon Technologies AG
Neubiberg, Germany
IGBT Bare Dies
SIGC06T65GE
IGBT Bare Dies SIGC06T65GE
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.


Summary of Features

  • Low turn-off losses
  • Short tail current
  • Positive temperature coefficient
  • Easy paralleling
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SIGC06T65GE
Product Name IGBT Bare Dies
VCE(on) 650 volts
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