Infineon Technologies AG IGBTs - Single - SGW15N60FKSA1 SGW15N60FKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1095630-SGW15N60FKSA 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 76nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 31A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 139W Pulsed Collector Current: 62A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 15A Total Switching Energy(Ets): 570μJ Turn-on and Turn-off delay time: 32ns/234ns Testing Conditions: 400V, 15A, 21 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1095630-SGW15N60FKSA 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 76nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 31A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 139W Pulsed Collector Current: 62A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 15A Total Switching Energy(Ets): 570μJ Turn-on and Turn-off delay time: 32ns/234ns Testing Conditions: 400V, 15A, 21 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - SGW15N60FKSA1 - 1095630-SGW15N60FKSA1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGW15N60FKSA1
1095630-SGW15N60FKSA1
IGBTs - Single - SGW15N60FKSA1 1095630-SGW15N60FKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1095630-SGW15N60FKSA 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 76nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 31A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 139W Pulsed Collector Current: 62A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 15A Total Switching Energy(Ets): 570μJ Turn-on and Turn-off delay time: 32ns/234ns Testing Conditions: 400V, 15A, 21 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1095630-SGW15N60FKSA1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 76nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 31A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 139W
Pulsed Collector Current: 62A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 15A
Total Switching Energy(Ets): 570μJ
Turn-on and Turn-off delay time: 32ns/234ns
Testing Conditions: 400V, 15A, 21 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
600V 31A 139W IGBT Transistor
279-SGW15N60FKSA1
600V 31A 139W IGBT Transistor 279-SGW15N60FKSA1
IGBT 600V 31A 139W TO247-3 Product overview: SGW15N60FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, 139W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 31A, 139W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGW15N60FKSA1 can be used for catalog matching and distributor lookup.

IGBT 600V 31A 139W TO247-3 Product overview: SGW15N60FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, 139W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 31A, 139W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGW15N60FKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - SGW15N60FKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGW15N60FKSA1-ND
Single IGBTs SGW15N60FKSA1-ND
IGBT NPT 600V 31A 139W Through Hole PG-TO247-3-1

IGBT NPT 600V 31A 139W Through Hole PG-TO247-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGW15N60FKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGW15N60FKSA1
Discrete Semiconductor Products - Transistors - IGBTs SGW15N60FKSA1
IGBT 600V 31A 139W TO247-3

IGBT 600V 31A 139W TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1095630-SGW15N60FKSA1 279-SGW15N60FKSA1 SGW15N60FKSA1-ND SGW15N60FKSA1
Product Name IGBTs - Single - SGW15N60FKSA1 600V 31A 139W IGBT Transistor Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.4 volts
PD 139000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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