Infineon Technologies AG Single IGBTs IRGSL30B60KPBF

Description
IGBT NPT 600V 78A 370W Through Hole TO-262
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Description
IGBT NPT 600V 78A 370W Through Hole TO-262
Request a Quote Datasheet

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Single IGBTs - IRGSL30B60KPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGSL30B60KPBF-ND
Single IGBTs IRGSL30B60KPBF-ND
IGBT NPT 600V 78A 370W Through Hole TO-262

IGBT NPT 600V 78A 370W Through Hole TO-262

Buy Now Datasheet
IGBTs - Single - IRGSL30B60KPBF - 136340-IRGSL30B60KPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGSL30B60KPBF
136340-IRGSL30B60KPBF
IGBTs - Single - IRGSL30B60KPBF 136340-IRGSL30B60KPBF
Manufacturer: Infineon Technologies Win Source Part Number: 136340-IRGSL30B60KPB F Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT Input Type: Standard Gate Charge: 102nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Maximum Current Collector: 78A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 370W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A Total Switching Energy(Ets): 350μJ (on), 825μJ (off) Turn-on and Turn-off delay time: 46ns/185ns Testing Conditions: 400V, 30A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 136340-IRGSL30B60KPBF
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 102nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Maximum Current Collector: 78A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 370W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.35V @ 15V, 30A
Total Switching Energy(Ets): 350μJ (on), 825μJ (off)
Turn-on and Turn-off delay time: 46ns/185ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGSL30B60KPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGSL30B60KPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGSL30B60KPBF
IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT W/ULTRAFAST SOFT RECOVERY D

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGSL30B60KPBF-ND 136340-IRGSL30B60KPBF IRGSL30B60KPBF
Product Name Single IGBTs IGBTs - Single - IRGSL30B60KPBF Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262
Packing Method Tube Rail; Tube; Tube/Rail Bulk; Bulk
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