Infineon Technologies AG Power - IGBT - IGBT Bare Dies - SIGC10T60E SIGC10T60E

Description
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
  • Power - IGBT - IGBT Bare Dies - SIGC10T60E - SIGC10T60E - Infineon Technologies AG
    Infineon Technologies AG
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Description
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Bare Dies - SIGC10T60E - SIGC10T60E - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Bare Dies - SIGC10T60E
SIGC10T60E
Power - IGBT - IGBT Bare Dies - SIGC10T60E SIGC10T60E
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.


Summary of Features

  • Low turn-off losses
  • Short tail current
  • Positive temperature coefficient
  • Easy paralleling
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SIGC10T60E
Product Name Power - IGBT - IGBT Bare Dies - SIGC10T60E
VCE(on) 600 volts
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