Manufacturer: Infineon Technologies
Win Source Part Number: 069669-IRGIB15B60KD1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 67ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 56nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 19A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 52W
Pulsed Collector Current: 38A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 15A
Total Switching Energy(Ets): 127μJ (on), 334μJ (off)
Turn-on and Turn-off delay time: 30ns/173ns
Testing Conditions: 400V, 15A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
IGBT NPT 600V 19A 52W Through Hole TO-220AB Full-Pak
IGBT 600V 19A 52W TO220FP Product overview: IRGIB15B60KD1P from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A, 52W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 19A, 52W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGIB15B60KD1P can be used for catalog matching and distributor lookup.
IGBT 600V 19A 52W TO220FP
SINGLE IGBT, 600V; DC COLLECTOR CURRENT:19A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.8V; POWER DISSIPATION PD:52W; COLLECTOR EMITTER VOLTAGE V(. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors 600V Low-Vceon
IGBT 600V 19A 52W TO220FP
SINGLE IGBT, 600V; Continuous Collector Current:19A; Power Dissipation:52W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 069669-IRGIB15B60KD1P | IRGIB15B60KD1P-ND | 279-IRGIB15B60KD1P | IRGIB15B60KD1P | 21293090 | IRGIB15B60KD1P | IRGIB15B60KD1P | 63J7449 |
| Product Name | IGBTs - Single - IRGIB15B60KD1P | Single IGBTs | 600V 19A 52W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Transistor | IGBT Transistors | Single IGBTs | Single Igbt, 600V; Continuous Collector Current Infineon |
| VCE(on) | 2.2 volts | |||||||
| PD | 52000 milliwatts | 52000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) |
