Infineon Technologies AG N-Channel 13A 600V IGBT Transistor IRGSL6B60KDPBF

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 Product overview: IRGSL6B60KDPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 13A, 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 13A, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGSL6B60KDPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1047388-IRGSL6B60KDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 18.2nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 90W
Pulsed Collector Current: 26A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 5A
Total Switching Energy(Ets): 110μJ (on), 135μJ (off)
Turn-on and Turn-off delay time: 25ns/215ns
Testing Conditions: 400V, 5A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance