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Infineon Technologies AG Single IGBTs IRGP4263PBF

Description
IGBT 650V 90A 300W Through Hole TO-247AC
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Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRGP4263PBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGP4263PBF-ND
Single IGBTs IRGP4263PBF-ND
IGBT 650V 90A 300W Through Hole TO-247AC

IGBT 650V 90A 300W Through Hole TO-247AC

Supplier's Site Datasheet
IGBTs - Single - IRGP4263PBF - 921524-IRGP4263PBF - Win Source Electronics
Yishun, Singapore
IGBTs - Single - IRGP4263PBF
921524-IRGP4263PBF
IGBTs - Single - IRGP4263PBF 921524-IRGP4263PBF
Manufacturer: Infineon Technologies Win Source Part Number: 921524-IRGP4263PBF Operating Temperature Range: -40°C ~ 175°C (TJ) Features: IGBT - 650 V 90 A 300 W Through Hole TO-247AC Package: Tube Package: TO-247-3 Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-247AC ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 25 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Infineon Technologies
Win Source Part Number: 921524-IRGP4263PBF
Operating Temperature Range: -40°C ~ 175°C (TJ)
Features: IGBT - 650 V 90 A 300 W Through Hole TO-247AC
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 25
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Supplier's Site Datasheet
 - 7871118 - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 278 W Package Type = TO-247AC Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 20kHz Transistor Configuration = Single

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 278 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 20kHz
Transistor Configuration = Single

Supplier's Site
 - 7871118P - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 278 W Package Type = TO-247AC Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 20kHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 278 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 20kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 1458808 - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 278 W Package Type = TO-247AC Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 20kHz Transistor Configuration = Single

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 278 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 20kHz
Transistor Configuration = Single

Supplier's Site
 - IRGP4263PBF - Rochester Electronics
Newburyport, MA, United States
IRGP4263 - Discrete IGBT without Anti-Parallel Diode

IRGP4263 - Discrete IGBT without Anti-Parallel Diode

Supplier's Site Datasheet
 - IRGP4263PBF - Rochester Electronics
Newburyport, MA, United States
IRGP4263 - Discrete IGBT without Anti-Parallel Diode

IRGP4263 - Discrete IGBT without Anti-Parallel Diode

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGP4263PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGP4263PBF
Discrete Semiconductor Products - Transistors - IGBTs IRGP4263PBF
IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT W/ULTRAFAST SOFT RECOVERY D

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGP4263PBF-ND 921524-IRGP4263PBF 7871118 IRGP4263PBF IRGP4263PBF
Product Name Single IGBTs IGBTs - Single - IRGP4263PBF Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AC TO-247; TO-247AC TO-247; TO-247
Packing Method Tube Tube; Tube Bulk; Bulk
Features IGBT - 650 V 90 A 300 W Through Hole TO-247AC
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