IGBT NPT 600V 60A 308W Through Hole TO-247AC
AUTOMOTIVE WARP2 IGBT ULTRAFAST
IGBT 600V 60A 308W TO247AC Product overview: IRGP35B60PDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A, 308W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A, 308W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGP35B60PDPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017741-IRGP35B60PDPB
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 160nC
Family Name: IRGP35B60PD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 308W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.55V @ 15V, 35A
Total Switching Energy(Ets): 220μJ (on), 215μJ (off)
Turn-on and Turn-off delay time: 26ns/110ns
Testing Conditions: 390V, 22A, 3.3 Ohm, 15V
Alternative Parts (Cross-Reference): AUIRGP35B60PD; STGW30NB60H; STGW30NB60HD; IXSH30N60CD1SN;
Introduction Date: June 02, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
IGBT Single Transistor, 60 A, 2.15 V, 308 W, 600 V, TO-247AC, 3 RoHS Compliant: Yes
IGBT 600V 60A 308W TO247AC
IGBT Transistors 600V Warp2 150kHz
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRGP35B60PDPBF-ND | IRGP35B60PDPBF | 279-IRGP35B60PDPBF | 017741-IRGP35B60PDPBF | 38K2888 | IRGP35B60PDPBF | IRGP35B60PDPBF |
| Product Name | Single IGBTs | Single IGBTs | 600V 60A 308W IGBT Transistor | IGBTs - Single - IRGP35B60PDPBF | Igbt Single Transistor, 60 A, 2.15 V, 308 W, 600 V, To-247Ac, 3 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | Tube | TO-247; SOT3; TO-247AC | TO-3; TO-247 | ||
| Packing Method | Tube | Tube | Bulk; Bulk | Tube; Tube |
