Manufacturer: Infineon Technologies
Win Source Part Number: 040782-IRGI4086PBF
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 65nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 25A
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Power Dissipation: 43W
Collector-emitter saturation voltage(Max): 2.96V @ 15V, 120A
Turn-on and Turn-off delay time: 36ns/112ns
Testing Conditions: 196V, 25A, 10 Ohm
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 50
IGBT 300V 25A 43W TO220AB Product overview: IRGI4086PBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 25A, 43W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 300V, 25A, 43W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGI4086PBF can be used for catalog matching and distributor lookup.
IGBT Trench 300V 25A 43W Through Hole TO-220AB Full-Pak
IGBT 300V 25A 43W TO220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 040782-IRGI4086PBF | 279-IRGI4086PBF | IRGI4086PBF-ND | IRGI4086PBF |
| Product Name | IGBTs - Single - IRGI4086PBF | 300V 25A 43W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.96 volts | |||
| PD | 43000 milliwatts | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |