Manufacturer: Infineon Technologies
Win Source Part Number: 1248476-SGD02N120
Family Name: SGD02N120
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): HGTD1N120CNS; IXGY2N120; SGD02N120XT;
Introduction Date: March 01, 2000
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) DPAK T/R / Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation Product overview: SGD02N120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 6.2A, 62000mW, DPAK. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 6.2A, 62000mW, DPAK. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGD02N120 can be used for catalog matching and distributor lookup.
IGBT, TRANSISTORS, NPT,1200V, 2A, TO-252-3,SMD. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors FAST IGBT NPT TECH 1200V 2A
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1248476-SGD02N120 | 279-SGD02N120 | 117225492 | SGD02N120 |
| Product Name | IGBTs - Single - SGD02N120 | 1200V 6.2A 62000mW DPAK IGBT Transistor | Transistor | IGBT Transistors |
| Package Type | SOT3 |
