The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips.
Summary of Features
Behavior in case of a failure
Hermetically sealed housing
Cooling of the device
Stack Design
Benefits
Full long term short-on-fail
Explosion proofed housing
Highest power cycling capability
Double side cooling
Wide range of clamping force
Applications
Flexible AC transmission systems (FACTS)
High voltage direct current (HVDC)
Industrial motor drives and controls
Medium voltage (MV) drive
Photovoltaic
The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips.
Summary of Features
- Behavior in case of a failure
- Hermetically sealed housing
- Cooling of the device
- Stack Design
Benefits
- Full long term short-on-fail
- Explosion proofed housing
- Highest power cycling capability
- Double side cooling
- Wide range of clamping force
Applications
- Flexible AC transmission systems (FACTS)
- High voltage direct current (HVDC)
- Industrial motor drives and controls
- Medium voltage (MV) drive
- Photovoltaic
