Infineon Technologies AG Single IGBTs IRGIB7B60KDPBF

Description
IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak
Request a Quote Datasheet
Description
IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak
Request a Quote Datasheet

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Product
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Single IGBTs - IRGIB7B60KDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGIB7B60KDPBF-ND
Single IGBTs IRGIB7B60KDPBF-ND
IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak

IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak

Buy Now Datasheet
IGBTs - Single - IRGIB7B60KDPBF - 1047349-IRGIB7B60KDPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGIB7B60KDPBF
1047349-IRGIB7B60KDPBF
IGBTs - Single - IRGIB7B60KDPBF 1047349-IRGIB7B60KDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047349-IRGIB7B60KDP BF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 95ns IGBT Type: NPT Input Type: Standard Gate Charge: 29nc Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Full-Pak Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 39W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A Total Switching Energy(Ets): 160μJ (on), 160μJ (off) Turn-on and Turn-off delay time: 23ns/140ns Testing Conditions: 400V, 8A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047349-IRGIB7B60KDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 95ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 29nc
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 39W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A
Total Switching Energy(Ets): 160μJ (on), 160μJ (off)
Turn-on and Turn-off delay time: 23ns/140ns
Testing Conditions: 400V, 8A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGIB7B60KDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGIB7B60KDPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGIB7B60KDPBF
IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT W/ULTRAFAST SOFT RECOVERY D

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGIB7B60KDPBF-ND 1047349-IRGIB7B60KDPBF IRGIB7B60KDPBF
Product Name Single IGBTs IGBTs - Single - IRGIB7B60KDPBF Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220AB Full-Pak
Packing Method Tube Rail; Tube; Tube/Rail Bulk; Bulk
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