IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak
INTERNATIONAL RECTIFIER IRGIB7B60KDPBF IGBT Single Transistor, 12 A, 2.2 V, 39 W, 600 V, TO-220FP, 3 Pins Product overview: IRGIB7B60KDPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 A, 2.2 V, 39 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 12 A, 2.2 V, 39 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGIB7B60KDPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1047349-IRGIB7B60KDP
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 95ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 29nc
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 39W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A
Total Switching Energy(Ets): 160μJ (on), 160μJ (off)
Turn-on and Turn-off delay time: 23ns/140ns
Testing Conditions: 400V, 8A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
IGBT W/ULTRAFAST SOFT RECOVERY D
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRGIB7B60KDPBF-ND | 279-IRGIB7B60KDPBF | 1047349-IRGIB7B60KDPBF | IRGIB7B60KDPBF |
| Product Name | Single IGBTs | 12 A 2.2 V 39 W IGBT Transistor | IGBTs - Single - IRGIB7B60KDPBF | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220AB Full-Pak | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Bulk; Bulk |