Infineon Technologies AG IGBTs - Single - IRGIB7B60KDPBF IRGIB7B60KDPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047349-IRGIB7B60KDP BF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 95ns IGBT Type: NPT Input Type: Standard Gate Charge: 29nc Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Full-Pak Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 39W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A Total Switching Energy(Ets): 160μJ (on), 160μJ (off) Turn-on and Turn-off delay time: 23ns/140ns Testing Conditions: 400V, 8A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047349-IRGIB7B60KDP BF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 95ns IGBT Type: NPT Input Type: Standard Gate Charge: 29nc Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Full-Pak Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 39W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A Total Switching Energy(Ets): 160μJ (on), 160μJ (off) Turn-on and Turn-off delay time: 23ns/140ns Testing Conditions: 400V, 8A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IRGIB7B60KDPBF - 1047349-IRGIB7B60KDPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGIB7B60KDPBF
1047349-IRGIB7B60KDPBF
IGBTs - Single - IRGIB7B60KDPBF 1047349-IRGIB7B60KDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047349-IRGIB7B60KDP BF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 95ns IGBT Type: NPT Input Type: Standard Gate Charge: 29nc Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Full-Pak Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 39W Pulsed Collector Current: 24A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A Total Switching Energy(Ets): 160μJ (on), 160μJ (off) Turn-on and Turn-off delay time: 23ns/140ns Testing Conditions: 400V, 8A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047349-IRGIB7B60KDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 95ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 29nc
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 39W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 8A
Total Switching Energy(Ets): 160μJ (on), 160μJ (off)
Turn-on and Turn-off delay time: 23ns/140ns
Testing Conditions: 400V, 8A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - IRGIB7B60KDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGIB7B60KDPBF-ND
Single IGBTs IRGIB7B60KDPBF-ND
IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak

IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGIB7B60KDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGIB7B60KDPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGIB7B60KDPBF
IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT W/ULTRAFAST SOFT RECOVERY D

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1047349-IRGIB7B60KDPBF IRGIB7B60KDPBF-ND IRGIB7B60KDPBF
Product Name IGBTs - Single - IRGIB7B60KDPBF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.2 volts
PD 39000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data