Manufacturer: Infineon Technologies
Win Source Part Number: 086912-IRGPS40B120UP
Packaging: Bulk
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 340nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SUPER-247 (TO-274AA)
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 595W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 3.71V @ 15V, 50A
Total Switching Energy(Ets): 1.4mJ (on), 1.65mJ (off)
Testing Conditions: 600V, 40A, 4.7 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
IGBT NPT 1200V 80A 595W Through Hole SUPER-247™ (TO-274AA)
1200V 80A N-Ch IGBT Transistor TO-274AA Product overview: IRGPS40B120UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 80A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 80A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGPS40B120UPBF can be used for catalog matching and distributor lookup.
IGBT 1200V 80A 595W SUPER247
(PRICE/EA) IGBT SINGLE TRANSISTOR, 80 A, 3.5 V, 595 W, 1.2 KV, TO-274AA, 3 ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 086912-IRGPS40B120UPBF | IRGPS40B120UPBF-ND | 279-IRGPS40B120UPBF | IRGPS40B120UPBF | 66777210 |
| Product Name | IGBTs - Single - IRGPS40B120UPBF | Single IGBTs | 1200V 80A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Transistor |
| VCE(on) | 3.71 volts | ||||
| PD | 595000 milliwatts | 595000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
