Infineon Technologies AG Single IGBTs IRGS6B60KDPBF

Description
IGBT NPT 600V 13A 90W Surface Mount D2PAK
Request a Quote Datasheet
Description
IGBT NPT 600V 13A 90W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRGS6B60KDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGS6B60KDPBF-ND
Single IGBTs IRGS6B60KDPBF-ND
IGBT NPT 600V 13A 90W Surface Mount D2PAK

IGBT NPT 600V 13A 90W Surface Mount D2PAK

Buy Now Datasheet
IGBTs - Single - IRGS6B60KDPBF - 040785-IRGS6B60KDPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGS6B60KDPBF
040785-IRGS6B60KDPBF
IGBTs - Single - IRGS6B60KDPBF 040785-IRGS6B60KDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040785-IRGS6B60KDPBF Packaging: Tube/Rail Mounting: SMD (SMT) Reverse Recovery Time (trr): 70ns IGBT Type: NPT Input Type: Standard Gate Charge: 18.2nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 13A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 90W Pulsed Collector Current: 26A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 5A Total Switching Energy(Ets): 110μJ (on), 135μJ (off) Turn-on and Turn-off delay time: 25ns/215ns Testing Conditions: 400V, 5A, 100 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 040785-IRGS6B60KDPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 18.2nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 90W
Pulsed Collector Current: 26A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 5A
Total Switching Energy(Ets): 110μJ (on), 135μJ (off)
Turn-on and Turn-off delay time: 25ns/215ns
Testing Conditions: 400V, 5A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
600V 13A 90W IGBT Transistor
279-IRGS6B60KDPBF
600V 13A 90W IGBT Transistor 279-IRGS6B60KDPBF
IGBT 600V 13A 90W D2PAK Product overview: IRGS6B60KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A, 90W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 13A, 90W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGS6B60KDPBF can be used for catalog matching and distributor lookup.

IGBT 600V 13A 90W D2PAK Product overview: IRGS6B60KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A, 90W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 13A, 90W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGS6B60KDPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBT 600V 13A 90W D2PAK - 376-IRGS6B60KDPBF - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 13A 90W D2PAK
376-IRGS6B60KDPBF
IGBT 600V 13A 90W D2PAK 376-IRGS6B60KDPBF
IGBT 600V 13A 90W D2PAK

IGBT 600V 13A 90W D2PAK

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IRGS6B60KDPBF
IGBT Transistors IRGS6B60KDPBF
IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT

IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGS6B60KDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGS6B60KDPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGS6B60KDPBF
IGBT 600V 13A 90W D2PAK

IGBT 600V 13A 90W D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGS6B60KDPBF-ND 040785-IRGS6B60KDPBF 279-IRGS6B60KDPBF 376-IRGS6B60KDPBF IRGS6B60KDPBF IRGS6B60KDPBF
Product Name Single IGBTs IGBTs - Single - IRGS6B60KDPBF 600V 13A 90W IGBT Transistor IGBT 600V 13A 90W D2PAK IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3; D2PAK Tube
Packing Method Tube Rail; Tube; Tube/Rail Tube Tube; Tube Tube; Tube
Structure NPT
VCE(on) 2.2 volts 2 volts
Unlock Full Specs
to access all available technical data