IGBT NPT 600V 13A 90W Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 040785-IRGS6B60KDPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 18.2nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 90W
Pulsed Collector Current: 26A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 5A
Total Switching Energy(Ets): 110μJ (on), 135μJ (off)
Turn-on and Turn-off delay time: 25ns/215ns
Testing Conditions: 400V, 5A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
IGBT 600V 13A 90W D2PAK Product overview: IRGS6B60KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A, 90W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 13A, 90W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGS6B60KDPBF can be used for catalog matching and distributor lookup.
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| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRGS6B60KDPBF-ND | 040785-IRGS6B60KDPBF | 279-IRGS6B60KDPBF | 376-IRGS6B60KDPBF | IRGS6B60KDPBF | IRGS6B60KDPBF |
| Product Name | Single IGBTs | IGBTs - Single - IRGS6B60KDPBF | 600V 13A 90W IGBT Transistor | IGBT 600V 13A 90W D2PAK | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3; D2PAK | Tube | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube | |
| Structure | NPT | |||||
| VCE(on) | 2.2 volts | 2 volts |
