Manufacturer: Infineon Technologies
Win Source Part Number: 016699-IRGP50B60PD1P
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 205nC
Family Name: IRGP50B60PD1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 390W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.85V @ 15V, 50A
Total Switching Energy(Ets): 255μJ (on), 375μJ (off)
Turn-on and Turn-off delay time: 30ns/130ns
Testing Conditions: 390V, 33A, 3.3 Ohm, 15V
Alternative Parts (Cross-Reference): AUIRGP50B60PD1; STGW45HF60WDI; STGW45HF60WD;
Introduction Date: June 02, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
IGBT 600V 75A 390W TO247AC
AUTOMOTIVE WARP2 IGBT ULTRAFAST
IGBT 600V 75A 390W TO247AC Product overview: IRGP50B60PD1PBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 390W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 390W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGP50B60PD1PBF can be used for catalog matching and distributor lookup.
IGBT NPT 600V 75A 390W Through Hole TO-247AC
IGBT Transistors 600V Warp2 150kHz
SINGLE IGBT, 600V, 75A; Continuous Collector Current:75A; Power Dissipation:390W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:IRGP Series; MSL:- RoHS Compliant: Yes
IGBT 600V 75A 390W TO247AC
SINGLE IGBT, 600V, 75A; DC COLLECTOR CURRENT:75A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.45V; POWER DISSIPATION PD:390W; COLLECTOR EMITTER VOL. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 016699-IRGP50B60PD1PBF | IRGP50B60PD1PBF | 279-IRGP50B60PD1PBF | IRGP50B60PD1PBF-ND | IRGP50B60PD1PBF | 63J7462 | IRGP50B60PD1PBF | 17623644 |
| Product Name | IGBTs - Single - IRGP50B60PD1PBF | Single IGBTs | 600V 75A 390W IGBT Transistor | Single IGBTs | IGBT Transistors | Single Igbt, 600V, 75A; Continuous Collector Current Infineon | Discrete Semiconductor Products - Transistors - IGBTs | Transistor |
| VCE(on) | 2.85 volts | |||||||
| PD | 390000 milliwatts | 390000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
