The IRGP4620D-EPbF is an N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode, designed for industrial motor drives, inverters, UPS, and welding applications. It is packaged in a TO-247AD case with a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 100°C. The collector-emitter saturation voltage is typically 1.55 V at 12 A and 25°C, increasing to 1.97 V at 175°C. It supports a maximum junction temperature of 175°C and has a thermal resistance junction-to-case of 1.12 °C/W. The device features a square reverse bias safe operating area, 5 µs short circuit withstand time, and a positive temperature coefficient of VCE(ON) for parallel operation. It is lead-free and RoHS compliant.
IGBT, SINGLE, 1.55V, 32A, TO-247AD; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 43X7264 |
| Product Name | Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon |
| PD | 140000 milliwatts |