Infineon Technologies AG Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon IRGP4620D-EPBF..

Description
IGBT, SINGLE, 1.55V, 32A, TO-247AD; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
Description
IGBT, SINGLE, 1.55V, 32A, TO-247AD; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The IRGP4620D-EPbF is an N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode, designed for industrial motor drives, inverters, UPS, and welding applications. It is packaged in a TO-247AD case with a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 100°C. The collector-emitter saturation voltage is typically 1.55 V at 12 A and 25°C, increasing to 1.97 V at 175°C. It supports a maximum junction temperature of 175°C and has a thermal resistance junction-to-case of 1.12 °C/W. The device features a square reverse bias safe operating area, 5 µs short circuit withstand time, and a positive temperature coefficient of VCE(ON) for parallel operation. It is lead-free and RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IRGP4620D-EPbF is an N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode, designed for industrial motor drives, inverters, UPS, and welding applications. It is packaged in a TO-247AD case with a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 100°C. The collector-emitter saturation voltage is typically 1.55 V at 12 A and 25°C, increasing to 1.97 V at 175°C. It supports a maximum junction temperature of 175°C and has a thermal resistance junction-to-case of 1.12 °C/W. The device features a square reverse bias safe operating area, 5 µs short circuit withstand time, and a positive temperature coefficient of VCE(ON) for parallel operation. It is lead-free and RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon - 43X7264 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon
43X7264
Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon 43X7264
IGBT, SINGLE, 1.55V, 32A, TO-247AD; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

IGBT, SINGLE, 1.55V, 32A, TO-247AD; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Operating Temperature Max:175°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 43X7264
Product Name Igbt, Single, 1.55V, 32A, To-247Ad; Continuous Collector Current Infineon
PD 140000 milliwatts
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