Infineon Technologies AG Single IGBTs SKB02N60ATMA1

Description
IGBT NPT 600V 6A 30W Surface Mount PG-TO263-3-2
Request a Quote Datasheet
Description
IGBT NPT 600V 6A 30W Surface Mount PG-TO263-3-2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - SKB02N60ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT 600V 6A 30W Surface Mount PG-TO263-3-2

IGBT NPT 600V 6A 30W Surface Mount PG-TO263-3-2

Buy Now Datasheet
IGBTs - Single - SKB02N60ATMA1 - 1096692-SKB02N60ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SKB02N60ATMA1
1096692-SKB02N60ATMA1
IGBTs - Single - SKB02N60ATMA1 1096692-SKB02N60ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1096692-SKB02N60ATMA 1 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 130ns IGBT Type: NPT Input Type: Standard Gate Charge: 14nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3 Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 30W Pulsed Collector Current: 12A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 2A Total Switching Energy(Ets): 64μJ Turn-on and Turn-off delay time: 20ns/259ns Testing Conditions: 400V, 2A, 118 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1096692-SKB02N60ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 130ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 14nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 30W
Pulsed Collector Current: 12A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 2A
Total Switching Energy(Ets): 64μJ
Turn-on and Turn-off delay time: 20ns/259ns
Testing Conditions: 400V, 2A, 118 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore, Singapore
600V 6A 30W IGBT Transistor
279-SKB02N60ATMA1
600V 6A 30W IGBT Transistor 279-SKB02N60ATMA1
IGBT 600V 6A 30W TO263-3 Product overview: SKB02N60ATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A, 30W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A, 30W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SKB02N60ATMA1 can be used for catalog matching and distributor lookup.

IGBT 600V 6A 30W TO263-3 Product overview: SKB02N60ATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A, 30W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A, 30W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SKB02N60ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SKB02N60ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SKB02N60ATMA1
Discrete Semiconductor Products - Transistors - IGBTs SKB02N60ATMA1
IGBT 600V 6A 30W TO263-3

IGBT 600V 6A 30W TO263-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKB02N60ATMA1TR-ND 1096692-SKB02N60ATMA1 279-SKB02N60ATMA1 SKB02N60ATMA1
Product Name Single IGBTs IGBTs - Single - SKB02N60ATMA1 600V 6A 30W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3; PG-TO263-3 Tape & Reel (TR)
Packing Method Tape Reel Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
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