Infineon Technologies AG IGBTs - Single - SKB02N60ATMA1 SKB02N60ATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1096692-SKB02N60ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 130ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 14nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 30W
Pulsed Collector Current: 12A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 2A
Total Switching Energy(Ets): 64μJ
Turn-on and Turn-off delay time: 20ns/259ns
Testing Conditions: 400V, 2A, 118 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

IGBT NPT 600V 6A 30W Surface Mount PG-TO263-3-2

IGBT 600V 6A 30W TO263-3 Product overview: SKB02N60ATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A, 30W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A, 30W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SKB02N60ATMA1 can be used for catalog matching and distributor lookup.