Infineon Technologies AG Single IGBTs IRGP50B60PD1-EP

Description
IGBT NPT 600V 75A 390W Through Hole TO-247AD
Request a Quote Datasheet
Description
IGBT NPT 600V 75A 390W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRGP50B60PD1-EP-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT 600V 75A 390W Through Hole TO-247AD

IGBT NPT 600V 75A 390W Through Hole TO-247AD

Buy Now Datasheet
Singapore, Singapore
600V 75A IGBT Transistor
279-IRGP50B60PD1-EP
600V 75A IGBT Transistor 279-IRGP50B60PD1-EP
IGBT NPT 600V 75A TO247AD Product overview: IRGP50B60PD1-EP from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGP50B60PD1-EP can be used for catalog matching and distributor lookup.

IGBT NPT 600V 75A TO247AD Product overview: IRGP50B60PD1-EP from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGP50B60PD1-EP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IRGP50B60PD1-EP - 1047363-IRGP50B60PD1-EP - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGP50B60PD1-EP
1047363-IRGP50B60PD1-EP
IGBTs - Single - IRGP50B60PD1-EP 1047363-IRGP50B60PD1-EP
Manufacturer: Infineon Technologies Win Source Part Number: 1047363-IRGP50B60PD1 -EP Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 42ns IGBT Type: NPT Input Type: Standard Gate Charge: 205nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 390W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.85V @ 15V, 50A Total Switching Energy(Ets): 255μJ (on), 375μJ (off) Turn-on and Turn-off delay time: 30ns/130ns Testing Conditions: 390V, 33A, 3.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047363-IRGP50B60PD1-EP
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 205nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 390W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.85V @ 15V, 50A
Total Switching Energy(Ets): 255μJ (on), 375μJ (off)
Turn-on and Turn-off delay time: 30ns/130ns
Testing Conditions: 390V, 33A, 3.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs IRGP50B60PD1-EP
IRGP50B60 - DISCRETE IGBT WITH A

IRGP50B60 - DISCRETE IGBT WITH A

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGP50B60PD1-EP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGP50B60PD1-EP
Discrete Semiconductor Products - Transistors - IGBTs IRGP50B60PD1-EP
IGBT NPT 600V 75A TO247AD

IGBT NPT 600V 75A TO247AD

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGP50B60PD1-EP-ND 279-IRGP50B60PD1-EP 1047363-IRGP50B60PD1-EP IRGP50B60PD1-EP IRGP50B60PD1-EP
Product Name Single IGBTs 600V 75A IGBT Transistor IGBTs - Single - IRGP50B60PD1-EP Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; TO-247; TO-3P-3 Full Pack Tube TO-247; SOT3; TO-247AD TO-3; TO-247; TO-3P-3 Full Pack
Packing Method Tube Tube Rail; Tube; Tube/Rail Tube; Tube
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