The IRGS15B60KPbF is a 600V n-channel insulated gate bipolar transistor designed for motor control applications, offering high efficiency and rugged transient performance. It is packaged in a D2PAK format weighing 1.44 g, with a maximum collector current of 31 A at 25°C and 15 A at 100°C. The device supports a maximum power dissipation of 208 W at 25°C and has a junction-to-case thermal resistance of 0.6 °C/W. It features a 10 µs short-circuit capability, square RBSOA, and a positive VCE(on) temperature coefficient. The transistor meets RoHS standards and is qualified for industrial use.
Trans IGBT Chip N-CH 600V 31A 208W 3-Pin(2+Tab) D2PAK Tube Product overview: IRGS15B60KPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, 208W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 31A, 208W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGS15B60KPBF can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IRGS15B60KPBF |
| Product Name | 600V 31A 208W IGBT Transistor |
| PD | 208 milliwatts |
