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IGBT 650V 90A 325W Through Hole TO-247AC
IGBT WITH RECOVERY DIODE
Manufacturer: Infineon Technologies
Win Source Part Number: 921531-IRGP4760DPBF
Operating Temperature Range: -40°C ~ 175°C (TJ)
Features: IGBT - 650 V 90 A 325 W Through Hole TO-247AC
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 25
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 325 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 325 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.
IRGP4760 - Discrete IGBT with Anti-Parallel Diode
IRGP4760 - Discrete IGBT with Anti-Parallel Diode
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Win Source Electronics | RS Components, Ltd. | Rochester Electronics | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRGP4760DPBF-ND | IRGP4760DPBF | 921531-IRGP4760DPBF | 8793444 | IRGP4760DPBF |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBTs - Single - IRGP4760DPBF | ||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | TO-247; TO-247AC | TO-247; TO-247COPAK | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||
| Features | IGBT - 650 V 90 A 325 W Through Hole TO-247AC |
