The IXFT86N30T is an N-channel enhancement mode MOSFET in a TO-268 package, designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It has a drain-source voltage rating of 300 V and a continuous drain current of 86 A at 25°C, with a maximum pulsed drain current of 190 A. The device features a maximum on-state resistance of 46 mΩ at 10 V gate-source voltage and 43 A drain current, and is avalanche rated with an energy rating of 1.5 J. It includes a fast intrinsic rectifier and has a junction temperature range of -55°C to +150°C. The TO-268 package has a weight of 4.0 g and mounting dimensions compliant with industry standards.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFT86N30T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
