The IXFP18N65X2M is an N-channel enhancement mode MOSFET for high-voltage switching applications such as power supplies and motor drives. It is packaged in an overmolded TO-220 case with an electrically isolated tab. The device has a drain-source breakdown voltage of 650 V, a continuous drain current of 18 A at 25°C, and a maximum on-state resistance of 200 mΩ at 10 V gate voltage and 9 A drain current. It is avalanche rated with 300 mJ energy rating and supports a transient gate-source voltage of ±40 V. The junction temperature range is -55°C to 150°C. The case-to-junction thermal resistance is 3.5 °C/W, and the case-to-heatsink thermal resistance is 0.50 °C/W. It meets the AEC-Q200 and RoHS standards.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFP18N65X2M |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
