Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFP220N06T3 IXFP220N06T3

Description
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages
Datasheet
Description
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages
Datasheet

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFP220N06T3 - IXFP220N06T3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFP220N06T3
IXFP220N06T3
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFP220N06T3 IXFP220N06T3
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages

The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFP220N06T3
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFP220N06T3
Polarity N-Channel
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