The IXFK24N100 is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 24 A continuous drain current, designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case, weighing 10 g, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.22 °C/W. The device features a low RDS(on) of 390 mΩ, an avalanche energy rating of 3 J, and a fast intrinsic diode with a reverse recovery time of 250 ns. It meets international standard package specifications and is avalanche rated with low package inductance.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK24N100 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
