The IXFR12N100Q is an N-channel enhancement mode Power MOSFET in an ISOPLUS247 package, designed for high-voltage switching applications such as DC-DC converters, battery chargers, and AC motor control. It has a drain-source voltage rating of 1000 V, a continuous drain current of 10 A at 25°C, and a gate-source voltage rating of ±20 V. The device features a typical on-resistance of 1.1 Ω, a power dissipation capability of 250 W, and a junction temperature range of -55°C to 150°C. The isolated back surface provides 2500 V electrical isolation, and the package has a low drain-to-tab capacitance of 50 pF. It is avalanche rated with an energy rating of 30 mJ and supports unclamped inductive switching. The device includes a fast intrinsic rectifier and is built using a rugged polysilicon gate cell structure on a direct-copper-bond substrate.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFR12N100Q |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
