Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N80P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFN32N80P is an N-channel enhancement mode MOSFET with a fast intrinsic diode, rated for 800 V drain-source voltage and 25 A continuous drain current. It is packaged in a miniBLOC SOT-227B case, 1.6 mm high and weighing 30 g. On-resistance is 270 mΩ at 10 V gate drive and 16 A drain current. Thermal resistance from junction to case is 0.2 °C/W, and case-to-heatsink is 0.05 °C/W. The device supports unclamped inductive switching up to 100 mJ and has a body diode with 250 ns reverse recovery time and 150 A repetitive peak current. It operates from -55°C to 150°C and meets UL 94 V-0 flammability standards with aluminum nitride isolation.

Datasheet Summary
Powered by GS/AI

The IXFN32N80P is an N-channel enhancement mode MOSFET with a fast intrinsic diode, rated for 800 V drain-source voltage and 25 A continuous drain current. It is packaged in a miniBLOC SOT-227B case, 1.6 mm high and weighing 30 g. On-resistance is 270 mΩ at 10 V gate drive and 16 A drain current. Thermal resistance from junction to case is 0.2 °C/W, and case-to-heatsink is 0.05 °C/W. The device supports unclamped inductive switching up to 100 mJ and has a body diode with 250 ns reverse recovery time and 150 A repetitive peak current. It operates from -55°C to 150°C and meets UL 94 V-0 flammability standards with aluminum nitride isolation.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN32N80P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN32N80P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N80P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 29A 800V 0.27ohm MOSFET Transistor
278-IXFN32N80P
N-Channel 29A 800V 0.27ohm MOSFET Transistor 278-IXFN32N80P
Power Field-Effect Transistor, 29A I(D), 800V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN32N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 29A, 800V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 29A, 800V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN32N80P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 29A I(D), 800V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN32N80P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 29A, 800V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 29A, 800V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN32N80P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN32N80P 278-IXFN32N80P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 29A 800V 0.27ohm MOSFET Transistor
Polarity N-Channel
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