Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX26N120P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFX26N120P is an N-channel enhancement mode power MOSFET with a 1200 V drain-source breakdown voltage and a continuous drain current of 26 A at 25°C, housed in a PLUS247 package. It features a low maximum on-state resistance of 500 mΩ, a fast intrinsic diode with a reverse recovery time of 300 ns, and is avalanche rated. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.13°C/W. It meets the AEC-Q200qualification standard and is designed for high-speed switching, switch-mode and resonant-mode power supplies, motor drives, and high-voltage pulse applications. The package has low inductance and is rated for mounting torque of 1.13 Nm (10 lb.in).

Datasheet Summary
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The IXFX26N120P is an N-channel enhancement mode power MOSFET with a 1200 V drain-source breakdown voltage and a continuous drain current of 26 A at 25°C, housed in a PLUS247 package. It features a low maximum on-state resistance of 500 mΩ, a fast intrinsic diode with a reverse recovery time of 300 ns, and is avalanche rated. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.13°C/W. It meets the AEC-Q200qualification standard and is designed for high-speed switching, switch-mode and resonant-mode power supplies, motor drives, and high-voltage pulse applications. The package has low inductance and is rated for mounting torque of 1.13 Nm (10 lb.in).

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX26N120P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX26N120P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX26N120P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 26A 1200V 0.46ohm MOSFET Transistor
278-IXFX26N120P
N-Channel 26A 1200V 0.46ohm MOSFET Transistor 278-IXFX26N120P
Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Product overview: IXFX26N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 1200V, 0.46ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 1200V, 0.46ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX26N120P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 26A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Product overview: IXFX26N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 1200V, 0.46ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 1200V, 0.46ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX26N120P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX26N120P 278-IXFX26N120P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 26A 1200V 0.46ohm MOSFET Transistor
Polarity N-Channel
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