The IXFK80N50Q3 is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring a 500 V drain-source voltage rating and an 80 A continuous drain current. It is packaged in a TO-264 case with a mounting torque of 1.13 Nm and weighs 10 g. The device has a maximum on-state resistance of 65 mΩ at 25 °C and a gate charge of 200 nC. It includes a fast intrinsic rectifier with a reverse recovery time of 250 ns and a repetitive avalanche energy rating of 5 J. The part is rated for operation from -55 °C to 150 °C junction temperature. It complies with RoHS standards and is avalanche rated.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qgand Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK80N50Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
