Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFT88N30P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFT88N30P is an N-channel enhancement mode power MOSFET in a TO-268 package, rated for 300V drain-source voltage and 88A continuous drain current at 25°C, with a maximum on-resistance of 40mΩ. It features an avalanche-rated design, a fast intrinsic diode with reverse recovery time up to 200ns, and low gate charge of 180nC. The device supports a peak pulse current of 220A and has a power dissipation of 600W at 25°C case temperature. Thermal resistance from junction to case is 0.21°C/W. It is designed for high-speed switching applications including DC-DC converters, motor drives, and uninterruptible power supplies.

Datasheet Summary
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The IXFT88N30P is an N-channel enhancement mode power MOSFET in a TO-268 package, rated for 300V drain-source voltage and 88A continuous drain current at 25°C, with a maximum on-resistance of 40mΩ. It features an avalanche-rated design, a fast intrinsic diode with reverse recovery time up to 200ns, and low gate charge of 180nC. The device supports a peak pulse current of 220A and has a power dissipation of 600W at 25°C case temperature. Thermal resistance from junction to case is 0.21°C/W. It is designed for high-speed switching applications including DC-DC converters, motor drives, and uninterruptible power supplies.

Suppliers

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Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFT88N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFT88N30P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFT88N30P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 88A 300V 0.04ohm MOSFET Transistor
278-IXFT88N30P
N-Channel 88A 300V 0.04ohm MOSFET Transistor 278-IXFT88N30P
Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Product overview: IXFT88N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 88A, 300V, 0.04ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 88A, 300V, 0.04ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFT88N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Product overview: IXFT88N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 88A, 300V, 0.04ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 88A, 300V, 0.04ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFT88N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFT88N30P 278-IXFT88N30P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 88A 300V 0.04ohm MOSFET Transistor
Polarity N-Channel
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