The IXFK32N100Q3 is an N-channel enhancement mode power MOSFET with a 1000 V drain-source breakdown voltage and a continuous drain current of 32 A at 25°C, housed in a TO-264 package weighing 10 g. It features a maximum on-state resistance of 320 mΩ at 10 V gate voltage and 16 A drain current, a gate charge of 195 nC, and a fast intrinsic rectifier with a reverse recovery time of 300 ns and recovery charge of 1.2 µC. The device is avalanche rated, has a thermal resistance from junction to case of 0.10 °C/W, and supports a maximum junction temperature of 150 °C. It meets international standard package requirements and includes low intrinsic gate resistance and low package inductance. The mounting torque for the TO-264 package is 1.13 Nm (10 lb.in.).
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK32N100Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
