The IXFK420N10T is an N-channel enhancement mode power MOSFET in a TO-264 package, designed for high-current switching applications such as synchronous rectification, DC-DC converters, and AC motor drives. It has a drain-source voltage rating of 100 V, a continuous drain current of 420 A at 25°C, and a maximum drain-source on-resistance of 2.6 mΩ at 10 V gate drive. The device features a fast intrinsic diode, avalanche capability, and is rated for junction temperatures from -55°C to 175°C. Its mounting torque is specified at 1.13 Nm for the TO-264 package. It meets RoHS standards and is packaged in an international standard case with a weight of 10 g.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK420N10T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
