Littelfuse, Inc. 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN80N50Q2

Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
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Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
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Datasheet
Datasheet Summary
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The IXFN80N50Q2 is an N-channel enhancement mode Power MOSFET with a 500V drain-source breakdown voltage and a 72A continuous drain current at 25°C, designed for high-power switching applications such as DC-DC converters, battery chargers, and switch-mode power supplies. It is housed in a miniBLOC package with aluminum nitride isolation, weighing 30 g, and features a low on-resistance of 65 mΩ at 10V gate bias and 40A drain current. The device includes a fast intrinsic rectifier with a reverse recovery time of 250 ns and is avalanche rated. Thermal resistance from junction to case is 0.14°C/W, and the case-to-sink thermal resistance is 0.05°C/W. It meets the AEC-Q200 standard and is rated for operation from -55°C to 150°C junction temperature. The package supports dual-source terminals for Kelvin connection and has low package inductance.

Datasheet Summary
Powered by GS/AI

The IXFN80N50Q2 is an N-channel enhancement mode Power MOSFET with a 500V drain-source breakdown voltage and a 72A continuous drain current at 25°C, designed for high-power switching applications such as DC-DC converters, battery chargers, and switch-mode power supplies. It is housed in a miniBLOC package with aluminum nitride isolation, weighing 30 g, and features a low on-resistance of 65 mΩ at 10V gate bias and 40A drain current. The device includes a fast intrinsic rectifier with a reverse recovery time of 250 ns and is avalanche rated. Thermal resistance from junction to case is 0.14°C/W, and the case-to-sink thermal resistance is 0.05°C/W. It meets the AEC-Q200 standard and is rated for operation from -55°C to 150°C junction temperature. The package supports dual-source terminals for Kelvin connection and has low package inductance.

Suppliers

Company
Product
Description
Supplier Links
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN80N50Q2 - Littelfuse, Inc.
Rosemont, IL, United States
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN80N50Q2
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN80N50Q2
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 80A 500V 0.06ohm MOSFET Transistor
278-IXFN80N50Q2
N-Channel 80A 500V 0.06ohm MOSFET Transistor 278-IXFN80N50Q2
Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN Product overview: IXFN80N50Q2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 500V, 0.06ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 500V, 0.06ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN80N50Q2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN Product overview: IXFN80N50Q2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 500V, 0.06ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 500V, 0.06ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN80N50Q2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN80N50Q2 278-IXFN80N50Q2
Product Name 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 80A 500V 0.06ohm MOSFET Transistor
Polarity N-Channel
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