The IXFK64N60Q3 is an N-channel enhancement mode power MOSFET with a 600 V drain-to-source voltage rating and a 64 A continuous drain current, designed for high-efficiency switching applications such as DC-DC converters and battery chargers. It is packaged in a TO-264 case with a mounting torque of 1.13 Nm and weighs 10 g. The device features a maximum on-state resistance of 95 mΩ, a gate charge of 190 nC, and a fast intrinsic rectifier with a reverse recovery time of 300 ns. It is avalanche rated with an energy rating of 3 J and supports a transient drain current of 250 A. The part meets RoHS standards and is qualified for operation from -55 °C to 150 °C junction temperature. It has low intrinsic gate resistance and low package inductance for improved switching performance.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK64N60Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
