Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN26N120P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFN26N120P is an N-channel enhancement mode Power MOSFET for high-voltage switching in power supplies and motor drives. Packaged in a miniBLOC case weighing 30 g, it has a 1200 V drain-source voltage rating and a continuous drain current of 23 A at 25°C. Its drain-source on-resistance is 500 mΩ at 13 A and 10 V gate-source voltage. The device features a fast intrinsic diode with a reverse recovery time of 300 ns, an avalanche rating, and a dynamic dv/dt rating of 20 V/ns. Thermal resistance from junction to case is 0.18 °C/W. The operating junction temperature range is -55°C to 150°C. Isolation withstand is 2500 V RMS for 1 minute and 3000 V RMS for 1 second.

Datasheet Summary
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The IXFN26N120P is an N-channel enhancement mode Power MOSFET for high-voltage switching in power supplies and motor drives. Packaged in a miniBLOC case weighing 30 g, it has a 1200 V drain-source voltage rating and a continuous drain current of 23 A at 25°C. Its drain-source on-resistance is 500 mΩ at 13 A and 10 V gate-source voltage. The device features a fast intrinsic diode with a reverse recovery time of 300 ns, an avalanche rating, and a dynamic dv/dt rating of 20 V/ns. Thermal resistance from junction to case is 0.18 °C/W. The operating junction temperature range is -55°C to 150°C. Isolation withstand is 2500 V RMS for 1 minute and 3000 V RMS for 1 second.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN26N120P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN26N120P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN26N120P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 23A 1200V 0.46ohm MOSFET Transistor
278-IXFN26N120P
N-Channel 23A 1200V 0.46ohm MOSFET Transistor 278-IXFN26N120P
Power Field-Effect Transistor, 23A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Product overview: IXFN26N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 1200V, 0.46ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 23A, 1200V, 0.46ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN26N120P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 23A I(D), 1200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Product overview: IXFN26N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 1200V, 0.46ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 23A, 1200V, 0.46ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN26N120P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN26N120P 278-IXFN26N120P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 23A 1200V 0.46ohm MOSFET Transistor
Polarity N-Channel
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