Littelfuse, Inc. 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK94N50P2

Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
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Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
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Datasheet
Datasheet Summary
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The IXFK94N50P2 is a 500V N-channel enhancement mode power MOSFET with a drain current rating of 94A at 25°C and a maximum pulsed drain current of 240A. It features a low on-resistance of 55mΩ at VGS = 10V and ID = 47A, and includes a fast intrinsic diode with a reverse recovery charge of 1.5μC. Housed in a TO-264 package weighing 10g, it has a maximum junction temperature of 150°C and an avalanche energy rating of 3.5J. The device is rated for a maximum dV/dt of 30V/ns and is avalanche rated. It supports switching applications in switch-mode power supplies, DC-DC converters, battery chargers, UPS systems, and motor drives.

Datasheet Summary
Powered by GS/AI

The IXFK94N50P2 is a 500V N-channel enhancement mode power MOSFET with a drain current rating of 94A at 25°C and a maximum pulsed drain current of 240A. It features a low on-resistance of 55mΩ at VGS = 10V and ID = 47A, and includes a fast intrinsic diode with a reverse recovery charge of 1.5μC. Housed in a TO-264 package weighing 10g, it has a maximum junction temperature of 150°C and an avalanche energy rating of 3.5J. The device is rated for a maximum dV/dt of 30V/ns and is avalanche rated. It supports switching applications in switch-mode power supplies, DC-DC converters, battery chargers, UPS systems, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK94N50P2 - Littelfuse, Inc.
Rosemont, IL, United States
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK94N50P2
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK94N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 94A 500V 0.055ohm MOSFET Transistor
278-IXFK94N50P2
N-Channel 94A 500V 0.055ohm MOSFET Transistor 278-IXFK94N50P2
Power Field-Effect Transistor, 94A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Product overview: IXFK94N50P2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 500V, 0.055ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 500V, 0.055ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK94N50P2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 94A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Product overview: IXFK94N50P2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 500V, 0.055ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 500V, 0.055ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK94N50P2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK94N50P2 278-IXFK94N50P2
Product Name 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 94A 500V 0.055ohm MOSFET Transistor
Polarity N-Channel
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