The IXFT52N50P2 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-268 case with a drain-source voltage rating of 500 V and a continuous drain current of 52 A at 25°C. The device has a maximum on-state resistance of 120 mΩ at VGS = 10 V and ID = 26 A, and includes a fast intrinsic diode with a reverse recovery time of 250 ns. It is rated for a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.13 °C/W. The device is avalanche rated and meets RoHS requirements.
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFT52N50P2 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFT52N50P2 |
| Polarity | N-Channel |
