Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX300N20X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXFX300N20X3 is an N-channel enhancement mode Power MOSFET designed for high-power switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It features an avalanche-rated TO-264K package with a maximum drain-source voltage of 200 V, continuous drain current of 160 A, and a drain-source on-resistance of 4 mΩ at 25°C. The device has a maximum junction temperature of 150°C, transient thermal impedance of 0.10 °C/W from junction to case, and a fast soft-recovery body diode with reverse recovery charge of 1.1 μC. It meets international standard package requirements and is rated for a peak pulse current of 700 A. The part is qualified under avalanche stress and exhibits low package inductance and high power density. The mounting torque for the TO-264K package is 1.13 Nm (10 lb.in).

Datasheet Summary
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The IXFX300N20X3 is an N-channel enhancement mode Power MOSFET designed for high-power switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It features an avalanche-rated TO-264K package with a maximum drain-source voltage of 200 V, continuous drain current of 160 A, and a drain-source on-resistance of 4 mΩ at 25°C. The device has a maximum junction temperature of 150°C, transient thermal impedance of 0.10 °C/W from junction to case, and a fast soft-recovery body diode with reverse recovery charge of 1.1 μC. It meets international standard package requirements and is rated for a peak pulse current of 700 A. The part is qualified under avalanche stress and exhibits low package inductance and high power density. The mounting torque for the TO-264K package is 1.13 Nm (10 lb.in).

Suppliers

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Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFX300N20X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFX300N20X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX300N20X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFX300N20X3
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
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