The IXFT52N30Q is an N-channel enhancement mode Power MOSFET in a TO-268AA (D3 PAK) package, designed for high-power switching applications. It has a drain-source voltage rating of 300 V and a continuous drain current of 52 A at 25°C, with a pulsed current capability of 208 A. The device features a low on-resistance of 60 mΩ, a gate charge of 150 nC, and an avalanche energy rating of 1.5 J at 25°C. It is rated for a maximum junction temperature of 150°C and meets UL 94 V-0 flammability standards. The device supports high dv/dt operation up to 5 V/ns and includes a fast intrinsic rectifier. Thermal resistance from junction to case is 0.15 K/W for the TO-268AA package. The part is avalanche rated and suitable for unclamped inductive switching.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFT52N30Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFT52N30Q |
| Polarity | N-Channel |
