Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFQ24N50P2 IXFQ24N50P2

Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
Datasheet
Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
Datasheet

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFQ24N50P2 - IXFQ24N50P2 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFQ24N50P2
IXFQ24N50P2
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFQ24N50P2 IXFQ24N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFQ24N50P2
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar2™ - IXFQ24N50P2
Polarity N-Channel
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