Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN160N30T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFN160N30T is an N-channel enhancement mode Power MOSFET rated for 300 V drain-source voltage and 130 A continuous drain current at 25°C, with a maximum on-state resistance of 19 mΩ at 10 V gate voltage. It features a miniBLOC SOT-227 package, 2500 V~ isolation voltage, and an avalanche energy rating of 5 J. The device includes a fast intrinsic diode with a reverse recovery time of 200 ns and is rated for junction temperatures from -55°C to 150°C. It meets the AEC-Q200 automotive qualification standard and is designed for applications including DC-DC converters, switch-mode power supplies, and motor drives.

Datasheet Summary
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The IXFN160N30T is an N-channel enhancement mode Power MOSFET rated for 300 V drain-source voltage and 130 A continuous drain current at 25°C, with a maximum on-state resistance of 19 mΩ at 10 V gate voltage. It features a miniBLOC SOT-227 package, 2500 V~ isolation voltage, and an avalanche energy rating of 5 J. The device includes a fast intrinsic diode with a reverse recovery time of 200 ns and is rated for junction temperatures from -55°C to 150°C. It meets the AEC-Q200 automotive qualification standard and is designed for applications including DC-DC converters, switch-mode power supplies, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFN160N30T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFN160N30T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN160N30T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFN160N30T
MOSFET Transistor 278-IXFN160N30T
Power Field-Effect Transistor, Product overview: IXFN160N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN160N30T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFN160N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN160N30T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN160N30T 278-IXFN160N30T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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