The IXFP22N65X2M is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in an overmolded TO-220 case with an electrically isolated tab, measuring 1.6 mm from case to solder point. The device has a drain-source breakdown voltage of 650 V, a continuous drain current rating of 22 A at 25°C, and a maximum on-state resistance of 145 mΩ at 10 V gate voltage and 11 A drain current. It supports avalanche operation, features a fast soft-recovery body diode with a reverse recovery time of 145 ns, and provides 2500 V~ electrical isolation. Thermal resistance from junction to case is 3.37 °C/W. The MOSFET meets IEC 60286-3, UL 94 V-0, and RoHS standards, and is rated for operation from -55°C to 150°C junction temperature.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXFP22N65X2M from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP22N65X2M can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP22N65X2M | 278-IXFP22N65X2M |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | MOSFET Transistor |
| Polarity | N-Channel |
