Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK320N17T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
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Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
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Datasheet
Datasheet Summary
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The IXFK320N17T2 is an N-channel enhancement mode Power MOSFET designed for high-power switching applications such as synchronous rectification, DC-DC converters, and AC motor drives. It comes in a TO-264 package, weighing 10 grams, with a drain-source breakdown voltage of 170 V and a continuous drain current rating of 320 A at 25°C. The maximum on-resistance is 5.2 mΩ at 10 V gate voltage and 60 A drain current. It features a fast intrinsic diode with a reverse recovery time of 150 ns and is avalanche rated with an energy rating of 5 J. The device supports a maximum junction temperature of 175°C and a gate-source voltage of ±20 V continuous. Mounting torque is specified at 1.13 Nm for the TO-264 package.

Datasheet Summary
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The IXFK320N17T2 is an N-channel enhancement mode Power MOSFET designed for high-power switching applications such as synchronous rectification, DC-DC converters, and AC motor drives. It comes in a TO-264 package, weighing 10 grams, with a drain-source breakdown voltage of 170 V and a continuous drain current rating of 320 A at 25°C. The maximum on-resistance is 5.2 mΩ at 10 V gate voltage and 60 A drain current. It features a fast intrinsic diode with a reverse recovery time of 150 ns and is avalanche rated with an energy rating of 5 J. The device supports a maximum junction temperature of 175°C and a gate-source voltage of ±20 V continuous. Mounting torque is specified at 1.13 Nm for the TO-264 package.

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFK320N17T2 - Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFK320N17T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFK320N17T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFK320N17T2
MOSFET Transistor 278-IXFK320N17T2
Power Field-Effect Transistor, Product overview: IXFK320N17T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK320N17T2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFK320N17T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK320N17T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK320N17T2 278-IXFK320N17T2
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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