Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-Channel MOSFET, 850V, 66A Product overview: IXFN66N85X from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 850V, 66A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 850V, 66A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN66N85X can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN66N85X | 278-IXFN66N85X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options | N-Channel 850V 66A MOSFET Transistor |
| Polarity | N-Channel |
