Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK80N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFK80N60P3 is an N-channel enhancement mode MOSFET designed for high-speed power switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case with dimensions of 26.16 mm by 19.96 mm and weighs 10 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 80 A at 25°C, and a maximum pulsed drain current of 200 A. Its on-resistance is 77 mΩ at 10 V gate drive and 0.5 × I_D25 current. It features a fast intrinsic diode with a reverse recovery time of 250 ns, avalanche capability, low gate charge of 190 nC, low package inductance, and a junction temperature range of -55°C to +150°C. The maximum case temperature is 150°C, and the thermal resistance from junction to case is 0.096°C/W. The device is avalanche rated and meets the standard TO-264 package profile.

Datasheet Summary
Powered by GS/AI

The IXFK80N60P3 is an N-channel enhancement mode MOSFET designed for high-speed power switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case with dimensions of 26.16 mm by 19.96 mm and weighs 10 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 80 A at 25°C, and a maximum pulsed drain current of 200 A. Its on-resistance is 77 mΩ at 10 V gate drive and 0.5 × I_D25 current. It features a fast intrinsic diode with a reverse recovery time of 250 ns, avalanche capability, low gate charge of 190 nC, low package inductance, and a junction temperature range of -55°C to +150°C. The maximum case temperature is 150°C, and the thermal resistance from junction to case is 0.096°C/W. The device is avalanche rated and meets the standard TO-264 package profile.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK80N60P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK80N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK80N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 600V 80A MOSFET Transistor
278-IXFK80N60P3
N-Channel 600V 80A MOSFET Transistor 278-IXFK80N60P3
600V N-Channel MOSFET 80A Power Transistor Product overview: IXFK80N60P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK80N60P3 can be used for catalog matching and distributor lookup.

600V N-Channel MOSFET 80A Power Transistor Product overview: IXFK80N60P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK80N60P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK80N60P3 278-IXFK80N60P3
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 600V 80A MOSFET Transistor
Polarity N-Channel
Unlock Full Specs
to access all available technical data