Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN48N50Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFN48N50Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227 B) case, measuring 38.23 mm in height and 31.88 mm in width, with a weight of 30 g. It has a drain-source breakdown voltage of 500 V, a continuous drain current of 48 A at 25°C, and a maximum pulse current of 192 A. The on-resistance is 100 mΩ at 10 V gate voltage and 25°C, with a maximum junction temperature of 150°C. The device features a fast intrinsic diode, low gate charge (40 nC), low terminal inductance (<10 nH), and is avalanche rated with an energy rating of 2.5 mJ. Thermal resistance from junction to case is 0.26 K/W. The package provides aluminum nitride isolation and meets UL 94 V-0 flammability standards.

Datasheet Summary
Powered by GS/AI

The IXFN48N50Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227 B) case, measuring 38.23 mm in height and 31.88 mm in width, with a weight of 30 g. It has a drain-source breakdown voltage of 500 V, a continuous drain current of 48 A at 25°C, and a maximum pulse current of 192 A. The on-resistance is 100 mΩ at 10 V gate voltage and 25°C, with a maximum junction temperature of 150°C. The device features a fast intrinsic diode, low gate charge (40 nC), low terminal inductance (<10 nH), and is avalanche rated with an energy rating of 2.5 mJ. Thermal resistance from junction to case is 0.26 K/W. The package provides aluminum nitride isolation and meets UL 94 V-0 flammability standards.

Suppliers

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Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN48N50Q - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN48N50Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN48N50Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 48A 500V 100ohm MOSFET Transistor
278-IXFN48N50Q
N-Channel 48A 500V 100ohm MOSFET Transistor 278-IXFN48N50Q
Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN48N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 48A, 500V, 100ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 48A, 500V, 100ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN48N50Q can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Product overview: IXFN48N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 48A, 500V, 100ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 48A, 500V, 100ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN48N50Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN48N50Q 278-IXFN48N50Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 48A 500V 100ohm MOSFET Transistor
Polarity N-Channel
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