The IXFX120N30P3 is an N-channel enhancement mode MOSFET designed for high-speed power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a PLUS247 case, weighing 6 g, and features a drain-source breakdown voltage of 300 V, continuous drain current of 120 A at 25°C, and a maximum drain-source on-resistance of 27 mΩ. The device includes a fast intrinsic diode with reverse recovery time not exceeding 250 ns and is avalanche rated. It has a low gate charge of 150 nC, low drain-to-source capacitance of 1406 pF, and thermal resistance junction-to-case of 0.11 °C/W. The MOSFET meets the AEC-Q200 and RoHS standards, with a gate-source voltage limit of ±20 V continuous and ±30 V transient. Mounting requires a force of 20 to 120 N (4.5 to 27 lb).
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Power Field-Effect Transistor, Product overview: IXFX120N30P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX120N30P3 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFX120N30P3 | 278-IXFX120N30P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFET Transistor |
| Polarity | N-Channel |
