Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX140N30P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFX140N30P is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and motor control. It is packaged in the PLUS247 case with a weight of 6 g and features a maximum drain-source voltage of 300 V, a continuous drain current of 140 A at 25°C, and a drain-source on-resistance of 24 mΩ at 10 V gate drive. The device has an avalanche energy rating of 5 J, a gain-bandwidth product of 90 S, and a thermal resistance junction-to-case of 0.12 °C/W. It includes a fast intrinsic diode with a reverse recovery charge of 72 nC and is rated for junction temperatures from −55°C to 150°C. The part meets avalanche and RoHS standards and is characterized by low package inductance and enhanced dv/dt capability of 20 V/ns.

Datasheet Summary
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The IXFX140N30P is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and motor control. It is packaged in the PLUS247 case with a weight of 6 g and features a maximum drain-source voltage of 300 V, a continuous drain current of 140 A at 25°C, and a drain-source on-resistance of 24 mΩ at 10 V gate drive. The device has an avalanche energy rating of 5 J, a gain-bandwidth product of 90 S, and a thermal resistance junction-to-case of 0.12 °C/W. It includes a fast intrinsic diode with a reverse recovery charge of 72 nC and is rated for junction temperatures from −55°C to 150°C. The part meets avalanche and RoHS standards and is characterized by low package inductance and enhanced dv/dt capability of 20 V/ns.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX140N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX140N30P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX140N30P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 140A 300V 0.024ohm MOSFET Transistor
278-IXFX140N30P
N-Channel 140A 300V 0.024ohm MOSFET Transistor 278-IXFX140N30P
Power Field-Effect Transistor, 140A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Product overview: IXFX140N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 140A, 300V, 0.024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 140A, 300V, 0.024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX140N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 140A I(D), 300V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Product overview: IXFX140N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 140A, 300V, 0.024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 140A, 300V, 0.024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX140N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX140N30P 278-IXFX140N30P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 140A 300V 0.024ohm MOSFET Transistor
Polarity N-Channel
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